We use cookies to improve your experience. By your continued use of this site you accept such use. To change your settings please see our Privacy Policy.

Non-destructive Analysis (NDA)

Circuit Edit (CKT)

Materials Analysis (MA)

Application Forms

Software

MA-tek FTP

CSR Report

OBIRCH

Technical Concept

The Infrared Optical Beam Induced Resistance Change(IR OBIRCH), is a failure analysis tool used to detect IR illumination induced resistance change. 

It uses an IR-laser with a wavelength of 1340 nm to systematically scan a voltage-added IC device. The just-scanned area absorbs illuminated photons to change its resistance and thus alter its sensing current. In general, the resistance variation at a failure position is different than that for a normal area, which leads to distinct sensing currents. Thus, a position with current variation that is clearly different from other areas is probable of a failure point and is called a hot spot.

 

Such measurement could increase its sensitivity by adding a lock-in function. Furthermore, this technology can be used for backside measurement. Nowadays IR-OBIRCH is an indispensable important FA technology applied in IC development.

 

 

 

Equipment

HAMAMATSU uAMOS-200

 

 

 

 

 

Applications

  • IDDQ failure analysis(Idd quiescent current)
  • Inspection of defect in the metal line (void, Si nodule)
  • Inspection of abnormal resistances at contact holes (such as improper via contact)
  • Inspection of metal or poly bridging.
  • Burnout detection for circuits or elements 
  • Gate oxide leakage detection
  • Failure analysis for ESD/Latch-up
  • P-N junction leakage or breakdown
  • Monitoring active elements [devices], such as transistors and diodes

 

  

 

Contact

Taiwan|SoC Lab

EMMI team

: +886-3-6116678 ext:3910/3911 

: +886-952-301632

hc_efa@ma-tek.com

Taiwan|JB Lab

EMMI team

: +886-3-6116678 ext:1608/1609

: +886-987-058-875

jb_efa@ma-tek.com

 

Shanghai Lab

EFA team

: +86-21-5079-3616 ext:7051

: 135-2451-3161

efa_sh@ma-tek.com