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Non-destructive Analysis (NDA)

Circuit Edit (CKT)

Materials Analysis (MA)

Application Forms


MA-tek FTP

CSR Report

Delayer & Parallel Lapping

Technical Concept

This technology uses chemical solution/gas etching and mechanical polish to gradually remove different metal and oxide layers inside an IC chip. It can also be used to expose a selected layer when needed.


Parallel lapping uses chemical solution, etching gases, or mechanical polish to remove materials layer by layer including metal and oxide layers. Parallel lapping at a specific layer of interest can be well controlled.





Reactive ion etcher (RIE)


Polish equipment





Ma-tek is professional in IC delayer [parallel lapping] with three different processes:

  • Chemical wet etching
  • RIE dry etching
  • Mechanical polish



OM Imaging


SEM Imaging




Taiwan|SoC Lab

Project team

: +886-3-6116678 ext:2651/2655

: +886-983-352-361

: HC_PFA@ma-tek.com

Taiwan|JB Lab

Project team

: +886-3-6116678 ext : 1699

: +886-970-768-013

: JB_PFA@ma-tek.com


Shanghai Lab

Mr. Huang

: +86-21-5079-3616 ext:7038

: 182-2169-8031