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Ion Milling

Technical Concept

Also known as CP (cross-section polishing), the plasma used for this technique is usually generated by an inductively coupled RF source or microwave source. The electrodes emit fast-moving electrons. At the same time, argon atoms enter the plasma chamber through the diffusion screen, and the electromagnetic field surrounding the plasma chamber makes the electrons move in circular orbits. This circular motion causes the electrons to collide repeatedly with the argon atoms, resulting in a large quantity of positive argon ions. The positive argon ions are extracted from the electrode plasma source, and a set of calibrated electrodes is used to form the high-density beam, which, by striking the sample, produces a grinding effect. Afterward, the ground section can be observed with a microscope.

 

 

 

Equipment

Ion Milling System ArBlade 4000

Ion Milling System ArBlade 5000

  

 

 

Application

Cross-section Milling

In order to observe and analyze the internal structure of a sample, that internal structure must be exposed through cutting and grinding. However, deformation and damage due to stress cannot be avoided. Therefore, it is difficult to obtain the smooth surface necessary for SEM analysis.

Cross-section grinding via ion beam bombardment can prepare a sample without causing stress damage so that the SEM can provide effective sample preparation for multi-layer internal structure observation, layer thickness measurement as well as crystalline state and foreign material analysis.

 

 

Flatmilling

Conducting surface observation and analysis via SEM requires a large and uniform viewing surface. The CP flatmilling method can meet this need. Flatmilling can be used to remove the surface layer of a sample or to complete the follow-up processing for mechanical grinding.

 

 

 

Case Studies

After grinding, abnormal FFC samples can be processed using ion milling, thus effectively avoiding the problems of material pulling and abrasive back-filling and showing abnormal locations more clearly.

 

The structure of the photosensitive elements in products (CCD, CMOS) is very fragile and easily destroyed by the general CMP preparation method. Using ion milling, however, effectively eliminates the problem of stress caused by grinding, ensuring that the structure of the sample is not damaged by the preparation process.

 

Ion milling can be used for the preparation of a wide range of samples. By setting the parameters, ion milling can complete an accurate analysis of first and second solder joints.

 

Some LED materials use sapphire wafers, which have a higher hardness. In this case, using only a simple CMP preparation can easily result in layer differences. However, section processing via ion milling can effectively solve the layer difference problem.

 

Once processed via ion milling, you can clearly observe the Cu grains of the sample via SEM.

 

 

Contact

Taiwan|SoC Lab

SEM team

: +886-3-6116678 ext:3650

: +886-952-301-639

sem_hc@ma-tek.com

Taiwan|Jubei Lab

SEM team

: +886-3-6116678 ext:1607

: +886-970-850-120

: sem@ma-tek.com

 

Taiwan|Tainan Lab

Ms. Huang

: +886-3-6116678 ext:5212

: +886-961-301-658

epfa_tn@ma-tek.com

Shanghai Lab

SEM team

: +86-21-5079-3616 ext:7097

: 134-7265-3759

sem_sh@ma-tek.com

 

Xiamen Lab

Ms. Huang

: - - - - - - -

: 180-207-45619

: aliexhuang@ma-tek.com