SIMS(Secondary Ion Mass Spectrometry)
Technical Concept
We have two kinds of SIMS for different needs. CAMECA IMS-6f can be applied for high transmission and high mass resolution analysis. ATOMIKA SIMS 4500 can be applied for high depth resolution, ultra-shallow junction analysis. We also offer comprehensive surface and elemental analysis services by XPS with completed database and calibration standards.
The technique uses a beam of energetic primary ions to sputter the sample surface, producing ionized secondary particles that are detected using a mass spectrometer. The secondary ions are extracted by electric fields and then energy and mass analyzed to characterize materials. Depth profile of impurities content can be transferred from secondary ion intensity and ion sputtering time.
SIMS (Secondary Ion Mass Spectrometry / Secondary Ion Mass Spectroscopy) is a very powerful tool in the detection of elemental contents in solid materials with detection limit down to ppm, 10-6. Conventionally, there are three major systems comprising different configuration, magnetic-sector SIMS, Quadrupole SIMS, and time-of-flight (TOF) SIMS.
Application
The industrial applications include :
- Doping profile/Depth profile, where junction depth and dopant concentration can be characterized very accurately. The most popular application is applied to Ion implantation species, dosage characterization and doping concentration profile of LED (Light Emitting Diode). It can be done very accurately by reference analysis of international standards, where the junction depth of physically existed dopants will be determined very nicely. Alternatively, SRP (Spreading Resistance Profiling) could be a good method to determine the junction depth of electrically active dopants as a comparison study.
- Shallow junction and Ultra-shallow junction can be achieved by inclined angle sputtering of ion beam and/or low energy excitation. Generally speaking, quadrupole SIMS is the most efficient tool for this application. The minimum junction depth can be determined to be down to 20 nm for current technology.
- Trace contamination analysis is one of significant applications of SIMS analysis, owing to the detection of very surface elements, ex. process monitoring of metal pad in BGA (Ball Grid Array) substrate. However, this application was limited by the size of probing area, target area size of 80*80 mm2 and above would be preferred. Thus, SIMS analysis is also named as one of surface analyses of Elemental analysis(成份分析) techniques, like Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and electron spectroscopy of chemical analysis (ESCA).
- Copper/metal diffusion is a hot topic for advanced IC fabrication technology. In addition to front side materials analysis conventionally, back side SIMS analysis can minimize the ion mixing effect induced by ion sputtering from metal layer top of the front side. It is an alternative choice of sample preparation techniques combined with back side SIMS analysis.
Equipment Capacity
Magnetic-sector SIMS[Cameca ims-6f]
Quadrupole SIMS [Atomika sims-4500]
Analytical Techniques of Surface Analysis may include those items as follows：
SIMS, Secondary Ion Mass Spectrometry / Secondary Ion Mass Spectroscopy
SRP, Spreading Resistance Profiling
AES, Auger Electron Spectroscopy
XPS, X-ray Photoelectron Spectroscopy
ESCA, Electron Spectroscopy for Chemical Analysis
SCM, Scanning Capacitance Microscopy
AFM, Atomic Force Microscopy
LED (Light Emitting Diode) analysis
Trace contamination analysis of metal pad in BGA substrate
Ion implantation profiling for ultra-shallow junction
Ion implantation profiling of 2 MeV implant
Contact Window
Ms. Chenze Yang
TEL：+886-3-6116678 ext :3961
Mobile：+886-952-303810
