TEM (Transmission Electron Microscope)

• 3 sets of Philips Tecnai F-20 (Field Emission Gun) TEM
• HAADF STEM Detector
• Electron Energy Loss Spectroscopy (EELS) Detector
• Gatan 925 Double Tilt /Rotation Holder
• EDX point analysis, line scan, mapping
• STEM imaging
• Ion Milling (PIPS)
• Protection Film coater (C, Al, Pt, SiO2...)

• Dual beam FIB: FEI Helios 400S, FEI NOVA 600, FEI Quanta 3D FEG
  。Ga+ ion/electron
  。Beam energy up to 30kV
  。Current: pA to nA range
  。Carbon, Al, Pt, SOG
  。Cut Size: Length=20-100um, depth=5~30um
• Fischione Plasma Cleaner
• Gatam 691 Precision Ion Polishing System (PIPS)
• Gatam 600 Ion Miller
• EzLaze 3 Laser Cutting Systems
• Sputtering/Evaporation Coater
• Polishers

Helios 400S		Nova		Quanta		Strata FIB 201, 205

SBT 910 Polisher		Hitachi Ion Sputter		108 Auto/SE Sputter Coater		Gatam 691 Precision Ion

Metaserv 2000 Polisher		Buehler Polisher		Gatam 600 Ion Miller		EzLaze 3 Laser

Capabilities:

• 32nm and 22nm semiconductor materials and processes analysis
• TEM Bright Field/Dark Field/High Resolution Image
  。Point Resolution 2.4Å
  。Line Resolution 1.02Å
• STEM Bright Field/High Angle Annual Dark Field (HAADF) Image, also named as Z-contrast
  resolution is 1.9Å
• EELS Mapping/Line-scan/Probe Spectrum
  。Large field-of-view Energy-filtered: 20um diagonal
  。Excellent Isochromaticity: max variation < ±1 eV at 200 kV
• EDX Mapping/Line-scan/Probe Spectrum
  。Beam Size <5nm
• Nano Beam Diffraction (NBD)
  。Beam Size <5nm, very sharp diffraction spots
• Selective Area Diffraction (SAD)

Potential applications of this technique have been demonstrated in both academic research and advanced R&D activities in various industries. It includes,

• High resolution imaging of sub-nano meter features, like atomic images, lattice planes, inter planar spacing.
• Phase identification of second phase formation, segregation, precipitation, and verification of crystalline/amorphous structures.
• Diffraction pattern analysis of crystalline phases, DC (Diamond Cubic), BCC (Body-Centered Cubic), FCC (Face-Centered Cubic), HCP (Hexagonal close-packed), and others.
• Determination of habit index plane of crystalline defects, such as burgers vector of edge/screw dislocations, inclined plane of stacking faults, and twinning planes,
• Study of defect kinetics, such as dislocation moving velocity, activation energy of dislocation formation, dislocation density of defect network, etc.
• Novel application of this technique has been shown to be precision analysis of a specific feature down to nano meter sizes. It employs FIB precision cutting onto any targeted locations and makes a cross-sectioning sample right across the pin-point failure site. Combined with EDX analysis, it turns out to be the most powerful technique to do microanalysis in ultimate small area of 5 nm, which is limited by TEM/EDX probe size.