SEM (Scanning Electron Microscopy)
Technical Concept
Ma-tek has high performance SEM–Hitachi 4800. We provide 24-hours services to satisfy customers' need.
Scanning Electron Microscopy (SEM) is the best method for sample's surface topography and microstructure inspection. Ma-tek Incorporation provides a variety of high resolution FE-SEM (Field Emission-SEM) such as Hitachi S-4800 and S-8020. They are able to inspect both plan view and cross-section view of samples. They are also applied to measure critical dimension (CD) and the maximum magnification can reach over 100,000 times. With an extra installed EDS (Energy Dispersive Spectrometry), we can conduct qualitative and semi-quantitative analysis for specified microstructure.
Equipment Capacity
Application
- Plan view and cross sectional microstructure inspection for all kinds of samples
- Multilayer sample inspection and precise critical dimension measurement
- Qualitative and semi-quantitative information is conducted by EDS for specified point, line and area
- Passive Voltage Contrast can be used for physical failure analysis to locate poor metal contact, leaky contact, or leaky poly gate, or poly-Si residue precisely
- Providing reference for circuit reverse engineering by combining delayer technique with OM and SEM images which are conducted by auto-photographing system
- Cooperating with EMMI (Emission Microscope) or OBIRCH (Optical Beam Induced Resistance Change) to locate physical failure position and subsequently to proceed microstructure cutting and SEM inspection for failure examination。
| Plan-view observation of DRAM cell safter removing capacitors |
Cross-sectional X-S SEM analysis DRAM cells at word line stitch |
Typical X-S SEM observation of IC devices, 2M1P |
Plan-view SEM observation of ESD failure |
| IC reverse engineering |
Passive Voltage Contrast(PVC) |
Contact Window
Mr. CK Lo
Tel：+886-3-6116678 ext：3600
Mobile：+886-958-301661
Ms. Peyru Chiou
Tel：+886-3-6116678 ext：1607
Mobile：+886-953-303817
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