Material Analysis(Sample preparation)
FIB Precision Cutting
Technical Concept
FIB (Focused Ion Beam)
．Focused : focusing ion beam
．Ion : Ga ---> Ga+ Gallium ion
．Beam : many ions with the same moving direction
FIB is that ionized gallium is accelerated by electric field and is focused by electrostatic lens. The ionized gallium with high energy and high speed then bombards the specified position with precision.
Equipment Capacity
FEI Helios 400S
FEI Nova 600
Application
FEI Helios400：
Helios has more power performance than SEM in imaging and is more suitable for failure analysis.
TEM Sample size：
TEM sample dimension can reach 30um width and 15um depth. The lamella can be also re-thinned in order to obtain better image quality.
Sample dimension：
The dimension of sample is 1cm height and 10cm diameter.
Ominprobe
Sample is put in FIB to increase the succeed rate and optimum of sample thickness
STEM images
The image quality can approach image quality of TEM.
| Bright field image |
Dark field image |
First Case：Demo the dual beam system of FIB
Step one :
electron beam is used to observe the top view of the sample and abnormal defects are identified.
Step two :
First side is cut by ion beam, and then, secondary electron images acquired by electron beam or ion beam is used to observe the cross section.
Step three :
The TEM lamella is prepared at the sample with abnormal defects. This method can accurately identified the root cause of the defects which are attribute to etching residue of metal residue or metal residue remaining between the metal lines.
FA CUT
1.SEM P-V
plain view of suspected defects |
2.FIB/SEM image. Cross sectional image by the electron beam at the milled position. |
3.TEM X-S (cross section image) |
Second Case：demo of the TEM sample preparation by FIB.
Step one :
Two cross marks by FIB is used to locate the specified position for cross-sectional milling.
Step two :
Between the two marks, protective layer, generally Pt is used, is deposited against the bombard of the ion beam during sample preparation.
Step three :
Two hollow aside the protective layer is roughly formed by the bombard of ion beam.
Step four :
Small current of ion beam is used to mill the hollow along the protective layer.
Step five :
The right side , left side and bottom side of the lamella is cut. The lamella is lift-out by glass probe and is put on the copper grid with carbon film.
| Focusing ion beam is used to cut the TEM sample. |
TEM sample by FIB cutting |
Focusing ion beam is used to cut the TEM sample |
Contact Window
Ms. JF Chiu
Tel：+886-3-6116678 ext：3675
Mobile：+886-918-301660
