OBIRCH, optical beam induced resistance change, is a semiconductor failure analyzer where scanning laser technique directly and rapidly localizes defective vias, contacts, and conductors from the front side and backsides of ICs. OBIRCH uses a scanned laser to produce localized thermal gradients in IC interconnections during functional testing or DC testing. A change in the pass/fail state with localized heating of the IC identifies the failing site. The technique reduces the time to locate resistive via from months to minutes and the S/N ratio can be greatly improved. Furthermore, by using the high current probe head, devices of high current and high voltage can be analyzed.
Localization of leakage current path
●IDDQ failure analysis(Idd quiescent current)
Detection of metal defect
●Inspection of defect in the metal line (void, Si nodule)
●Inspection of abnormal resistance part at contact hole (via contact)
●Metallization process monitoring